Special Topic: Novel Memory Materials and Devices: Ferroelectrics and Oxide Semiconductors
Oxide semiconductors, represented by IGZO, were developed in 2004 and have rapidly found commercial applications in the display industry. In recent years, scaled ultrathin oxide semiconductors have shown enormous application potential in silicon back-end-of-line (BEOL) compatible logic and memory applications due to their low thermal budget and excellent electrical properties such as extremely low off-state leakage current. Furthermore, new approaches for material growth are emerging recently using atomic layer deposition, which facilitates future applications in vertical channels and 3D stacking. Meanwhile, the complicated multi-component nature of oxide semiconductors has also brought many challenges from material science to device reliability. This special topic highlights the recent advances in novel oxide semiconductor material growth, memory and logic devices, and their potential applications.
This special topic focuses on novel memory materials and devices including ferroelectrics and oxide semiconductors. Prospective authors are invited to submit their original research papers and review articles on the state-of-the-art progress of selected topics.
Novel ferroelectric memory materials
Ferroelectric memory device technologies (FeRAM, FeFET, FTJ, etc.)
Ferroelectric-based devices for novel computing and bioinspired systems
Ferroelectric device modeling and simulation
3D integration of ferroelectric devices
Novel oxide semiconductor material growth and characterization
Oxide semiconductor device technology (short channel devices, vertical channel devices)
Oxide semiconductor device modeling and reliability
Oxide semiconductor devices for memory, logic, and RF applications
3D integration of oxide semiconductors with other device technologies
The papers should be edited in the SCIS template, and submitted online through the manuscript submission system of SCIENCE CHINA Information Sciences. The submission website is:
http://scis.scichina.com.
Dr. Jing Feng
Science China Press, fengjing@scichina.com
