锡氧团簇极紫外光刻胶中的Sn–C键在曝光时发生裂解并产生自由基，导致锡氧核的连接和溶解度变化。Sn–C键的反应活性和所产生自由基在薄膜中的迁移会对图案化结果（灵敏度和分辨率）产生重大影响。
近日，大连理工大学彭孝军院士和陈鹏忠副教授等人在Science China Materials发表研究论文，将Sn4-Me-C10（含Sn–methyl键）和Sn4-Bu-C10 （含Sn–butyl）这两种锡氧团簇结合起来，利用Sn–C键裂解产生的甲基和丁基自由基之间的反馈调节来平衡光刻胶的灵敏度和分辨率。
本文要点
1) Sn4-Bu-C10在低EBL曝光剂量下产生的丁基自由基引发Sn4-Me-C10的光刻反应，从而提高了灵敏度。2) 随后，Sn4-Me-C10产生的不稳定甲基自由基和体积较大的金刚烷自由基淬灭过量的丁基自由基，从而提高了分辨率和曝光裕度。这种利用自由基反馈调节的方法为设计具有高分辨率、高灵敏度的锡氧团簇EBL光刻胶提供了新的思路。Figure 1. Schematic illustration of free radicals feedback regulation of hybrid formulation.Figure 2. (a) CD and (c) LER of pattern lines of 2Me8Bu, 5Me5Bu, and 8Me2Bu rose in the wake of the increasing dose after IPA:DIW = 3:1 developing during EBL line exposure. (b) SEM and AFM images of pattern lines of 2Me8Bu and 8Me2Bu after IPA:DIW = 3:1 at an EBL dose of 28.5 nC/cm. (d) CD and (e) LER of pattern lines of 8Me2Bu in the wake of the increasing dose after MIBK developing during EBL line exposure. (f) SEM and AFM images of 100-nm and 70-nm pitch pattern lines of 8Me2Bu after MIBK developing at a dose of 60.5 nC/cm. (g) FIB-SEM cross-section image of 8Me2Bu at a dose of 60.5 nC/cm. (h) Constant Z of 8Me2Bu after developing by IPA:DIW=3:1 and MIBK.Figure 3. ToF-SIMS of 5Me5Bu after exposure, and zoom in on the peaks of m/z = 119.91, 136.91, 154.86, 163.87, 194.87, and 254.96.Figure 4. Proposed exposure mechanism for mixed formulations.Hao Chen, Xinyan Huang, Yingdong Zhao, Jun Zhao, Pengzhong Chen, Xiaojun Peng. Balancing sensitivity and resolution by feedback regulation of free radicals from Sn–C bonds in tin-oxygen clusters EBL photoresist. Sci. China Mater. (2024).https://doi.org/10.1007/s40843-024-3062-y
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