讲座介绍
讲座由哈工大红外薄膜与晶体团队主办，邀请了俄罗斯科学院普罗霍罗夫普通物理研究所Victor Ralchenko教授、Andrey Bolshakov教授以及莫斯科物理技术学高级研究员Mikhail Shestakov博士，讲座内容涉及金刚石、SnS2等先进应用研究。致力于为国内外研究人员提供一个突破时间和地域限制的学习和交流平台，助力科研和产业发展。期待您的关注与到来！
参会时间
2024年10月24号（周四）下午14：00（北京时间）
Oct. 24 2024 (Thursday) 14:00 pm Beijing time (9:00 am Moscow time)
参会方式
腾讯会议（Voov meeting）
会议链接（Link）：https://meeting.tencent.com/dw/2PqKzZbjWQ3f
会议号（Number）：958-690-561
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会议议程
No. | Speaker | Topic | Host |
1 | Prof. Victor Ralchenko Professor GPI, RSC,
Russia, HIT China, Zhengzhou Research Institute of HIT | Engineering of silicon-vacancy and germanium-vacancy
color centers in CVD diamond for quantum photonics | Jiaqi Zhu Professor Harbin Insitute of Techonolgy, Zhengzhou Research Institute of HIT |
2 | Prof. Andrey Bolshakov Senior researcher GPI, RSC, Russia, HIT China, Zhengzhou Research
Institute of HIT | Diamond growth at high pressures in microwave
plasma |
3 | Dr. Mikle Shestakov Senior researcher Moscow Institute of Physics and Technology | Luminescent properties of thulium doped tin
disulfide synthesized under high pressure for temperature sensing |
主讲人1
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Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia Zhengzhou Research Institute Harbin Institute of Technology, Harbin, P.R. ChinaVictor Ralchenko received his MS degree in quantum electronics in 1976 from Moscow Institute of Physics and Technology, and Ph.D. degree in physics from General Physics Institute of Russian Academy of Sciences (GPI RAS), Moscow, in 1989. Currently he is the head of Diamond Materials Laboratory at GPI RAS and professor at Harbin Institute of Technology. He is the author of over 450 contributions in peer-reviewed scientific journals. Currently his research interests mainly focus on CVD diamond synthesis and characterization, and diamond applications in electronics and photonics.Engineering of silicon-vacancy and germanium-vacancy color centers in CVD diamond for quantum photonicsSpecific defects in diamond, the color center “silicon-vacancy” (SiV) and “germanium-vacancy” (GeV), are among most promising photonic sources for quantum technologies. Here, we describe techniques to create SiV and GeV centers by in situ diamond doping with Si and Ge using silane SiH4 and germane GeH4 gaseous precursors. Small quantities of SiH4 or GeH4 are added in H2-CH4 microwave plasma (2.45 GHz) to allow the Si (Ge) atoms incorporation in the growing single crystal diamond. Optical emission spectroscopy is systematically applied to in situ monitor different species in the plasma, and to look how the plasma composition changes with process parameters. The emissions of SiV at 738 nm and GeV at 602 nm are revealed both in photoluminescence (PL) spectra and optical absorption spectra of the produced diamond layers. Important, that the PL intensity changes non-monotonically with silane (germane) content, the optimal SiH4 (GeH4) concentrations are established which maximize the SiV(GeV) optical emission. Characteristic zero-phonon line (ZPL) absorption spectra with four narrow components are obtained for the SiV at low temperature (T=5K), the width (FWHM) of the components being as small as 0.02 meV due to very low stress in the crystal. Such line width seems to be a record small for SiV ensembles. Isotopic effects on the absorption spectra at low T are studied using isotopically enriched SiH4 with 28, 29 and 30 Si masses, and/or diamond films highly enriched with carbon 13C isotope, and shifts of ZPL position are determined. Single photon emitters are identified for low-doped samples. Electron irradiation followed by annealing is shown to greatly enhance the SiV concentration. Finally, to extend the nomenclature of color centers within group IV of the elements, the doping of growing diamond with tin to form tin-vacancy (SnV) centers is also demonstrated.Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia Zhengzhou Research Institute Harbin Institute of Technology, Harbin, P.R. ChinaSenior researcher / PhD, Prokhorov General Physics Institute of the Russian Academy of Sciences. Current research interest CVD of SC diamond, plasma treatment, surface engineering. Honorary diploma of Russian Academy of Sciences 2023.Diamond growth at high pressures in microwave plasmaResults on CVD synthesis of diamond epitaxial and polycrystalline films in microwave plasma with increased growth rates achieved by using multicomponent gas mixtures and increased operating pressures (up to 600 Torr) are presented. Data on the growth of single-crystalline films in hydrocarbon gas mixtures, including those containing O2, on substrates (100) and (111) with control of growth rate and thickness of diamond films by in-situ low-coherence interferometry and recording of optical emission spectra from the plasma are shown. The optical and other physical characteristics of the obtained diamond films were investigated using various analytical techniques. Moscow Institute of Physics and Technology, Moscow, RussiaDr. Mikhail Shestakov was born in Moscow (Russia). He received his bachelor and master degrees from the Faculty of Materials Science, Lomonosov Moscow State University. His PhD thesis (Physics) was defended at KU Leuven in 2016. During his PhD, he was studying luminescence of silver nanoclusters in glasses using modern optical and theoretical methods. After that, he worked for Universities and Scientific Organizations in Belgium, Singapore and Russia doing his research in the broad range of scientific topics, e.g. Quantum Optics, Laser ablation, Polymers etc. Likewise, he received quite significant teaching experience delivering lectures and practical sessions on biochemistry and general physics. Besides, he has extensive Editor’s and Reviewers experience obtained at MDPI Publishing group. Right now, Dr. Shestakov is working as Senior Scientist at Moscow Institute of Physics and Technology doing his research in the field of functional materials and conducting lab sessions on Geospace physics for bachelor students.Luminescent properties of thulium doped tin disulfide synthesized under high pressure for temperature sensingTm-doped SnS2 powders (SnS2:Tm) were synthesized under high pressure up to 8 GPa and high temperature up to 1550 oC. Scanning Electron Microscopy (SEM) revealed that the synthesized powder consisted of large microplates containing Sn, S and Tm ions as shown by Energy Dispersive X-Ray (EDX) spectroscopy. The X-ray Diffraction (XRD) analysis confirmed crystallization of SnS2:Tm in the hexagonal lattice and indicated presence of unknown impurity. The Raman spectrum of the powders exhibited A1g and Eg modes typical for bulk SnS2 phase. Excitation at 2.331 eV resulted in 3F2,3→3H6 and 3H4→3H6 in the photoluminescence (PL) spectra in the wide temperature range from 5 to 298 K. The aforementioned photoluminescent transitions were found to be perspective for temperature sensing.主办单位
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红外薄膜与晶体团队隶属于特种环境复合材料技术国家级重点实验室及哈工大郑州研究院，由杜善义院士、韩杰才院士倡导成立，主要从事金刚石晶体与器件、透明件及光电薄膜和高导热复合材料等研究工作。学术带头人为教育部“长江学者”特聘教授，国家杰出青年科学基金获得者、“万人计划”领军人才朱嘉琦教授。
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哈工大郑州研究院暨哈尔滨工业大学产教融合人才培养基地（郑州）是哈尔滨工业大学和郑州市人民政府基于战略发展需要，为贯彻实施国家创新驱动发展战略，围绕区域产业特色，服务经济发展需求，共同举办的具有综合职能的新型研发机构。围绕医学健康与光电融合两大领域，智能制造、信息电子、智能建造、新能源等研究方向，研究院面向世界一流高校及科研院所开展技术引进、国际学术交流、国际科技平台建设等科研活动，实施外籍科研团队及外籍博士后高层次人才的引进与汇聚计划，逐步形成全方位、多层次、宽领域的常态化国际合作关系。
讲座联系人：
刘本建：liubenjian@hit.edu.cn
张森：zhangsen_hit@foxmail.com
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