报告人：Prof. Lain-Jong (Lance) Li
Perspective on the Future Electronics Based on Two-Dimensional Materials
With the dimension scaling, the transistor gate controllability becomes weaker owing to the pronounced source-drain tunneling. Hence, the transistor body thickness needs to be reduced to ensure efficient electrostatic control. New materials such as “ultra-thin” 2D semiconducting materials have attracted attention. In this talk, I would like to provide analysis and arguments on the possibility to scale the device dimension, for example down to 1nm technology node, using 2D transition metal dichalcogenides (TMD) semiconductors. At a circuit level, I shall provide our analysis on benchmarking 2D-based circuits with the state-of-the-art Si FinFETs, where we use SRAM circuits as the example to discuss the benefits of using 2D over Si FinFET (or GAA) in the technology nodes from N16 down to N1.
Current position:
Professor, Chair of Future Electronics & Chair of Physics by Courtesy
Director, HKU Microelectronics center
Mechanical Engineering, University of Hong Kong
Education:
· BA (1994) and MSc (1996) of Chemistry, National Taiwan University
· D.Phil (2006) of Condensed Matter Physics, Oxford University.
Experience
· Assistant Professor, MSE, NTU (Singapore) Jun 2006 – Dec 2009
· Associate Research Fellow, Academia Sinica (Taiwan) / Feb 2010 – Apr 2014
· Research Fellow (Tenured), Academia Sinica (Taiwan) / May 2014 – Jul 2014
· Associate Professor, King Abdullah University of Science and Technology (Saudi Arabia) / Aug 2014 – Jul 2016
· Full Professor, King Abdullah University of Science and Technology (Saudi Arabia) / Aug 2016 – Dec2017
· Chief Technology Officer (CTO), Nitronix Nanotechnology,Taiwan 2015- Dec 2017
· SHARP Professor, University of New South Wales (Australia) / Sep2018-Dec 2020
· Director, Corporate Research in Taiwan Semiconductor Manufacturing Company
(Taiwan)/Dec2017-Dec2020
