Abstract
Electronic oxide–metal strong interactions (EOMSI) refer to the electronic oxide-metal interactions (EOMI) between oxide adlayers and underlying metal substrate that is strong enough to stabilize supported oxide adlayers in a low-oxidation state, which individually is not stable under an ambient condition, from high temperature oxidation in air to a certain extent. Herein we report the deposition and electronic structure of CeOx adlayers on capping ligand-free cubic Ag nanocrystals, i.e., CeOx/Ag inverse catalysts. The EOMI occur via the charge transfer from Ag substrate to CeOx adlayers in the CeOx/Ag inverse catalyst, and the EOMSI are observed in the CeOx/Ag inverse catalyst with the average thickness of CeOx adlayers about 0.9 nm to exclusively form Ce2O3 adlayers stable against oxidation at 400 °C. As the thickness of CeOx adlayers increases, ceria adlayers with oxygen vacancies (CeO2–x) emerge and grow in the CeOx/Ag inverse catalysts, and the Ce3+/Ce4+ ratio decreases. Catalytic performance of CeOx/Ag inverse catalysts in the CO oxidation reaction is closely linked with the thickness and electronic structure of CeOx adlayers. These results demonstrate that the EOMSI and EOMI in the oxide/metal inverse catalysts are localized at the oxide-metal interface and sensitively vary with the thickness of oxide adlayers, offering a strategy of thickness engineering to tune electronic structures of oxide adlayers in oxide/metal inverse catalysts.
Y. Li, Z. Li, J. Hu, W. Huang, Electronic oxide-metal strong interactions (eomsi) localized at ceox-ag interface, The Journal of Physical Chemistry Letters, 2024, 8682-8688. DOI: 10.1021/acs.jpclett.4c01939.
