重庆师范大学李万俊教授团队（宽带隙半导体材料与器件团队）在新型透明导电薄膜研究中取得进展。该团队利用C掺杂策略显著提升了ZnO薄膜光电性质，研究出新型C掺杂ZnO透明导电薄膜，并将其作为电极材料研制出高性能Ga2O3基日盲深紫外光电探测器。相关成果以"Carbon-doped ZnO thin films: A transparent conductive oxide for application in solar-blind photodetectors"为题发表在自然指数期刊《Applied Physics Letters》杂志上。团队叶利娟副教授为第一作者，本科生于建豪为第二作者，李万俊教授和张红博士为共同通讯作者。
新型透明导电材料结合了高透光率与卓越的导电性能，为现代智能电子技术和光电应用开辟了全新的可能性。这些材料不仅能够让可见光自由穿透，同时作为电子传输的媒介，展现出优异的电流传输能力。在触摸屏、太阳能电池、LED照明、光电探测器、智能窗户及可穿戴设备等前沿光电器件领域，新型透明导电材料正引领着技术革新，促进产品向更轻薄、更灵活、更高效、更智能的方向发展。因此，开发新型透明导电材料成为国际热点课题。
氧化锌（ZnO），凭借其卓越的性能、环境友好及成本效益等，已成为透明导电氧化物领域的优选材料之一。本研究聚焦于掺碳技术，旨在探索其在提升ZnO薄膜光电性能方面的潜力。实验结果显示，碳掺杂ZnO（ZnO:C）薄膜在保持高质量表面形态的同时，其在可见光范围内还具有超高透过率，光学带隙表现出典型的Burstein–Moss效应。进一步分析表明，随着碳掺杂量的优化，ZnO:C薄膜展现出了高载流子浓度（~3.73×1019 cm-3）、低电阻率（~3.69×10-3 Ω·cm）以及保持高迁移率（~46.08 cm2/V·s）。基于此，团队将新型ZnO:C透明导电薄膜应用于Ga2O3基日盲深紫外光电探测器中，作为透明电极材料，成功实现了透明光电探测器件的构造，并表现出卓越的日盲深紫外光电探测能力。这一成果不仅为透明导电材料的研发开辟了新的路径，ZnO:C也有望成为传统IIIA掺杂ZnO透明导电材料在光电器件领域的有力竞争对手，展现出广阔的应用前景。
FIG. 1. (a) Growth rates of ZnO thin films with different carbon doping concentrations. (b)–(d) SIMS depth profiles of C, O, and Zn elements in ZnO films with varying carbon doping concentrations. (e) XRD patterns of ZnO thin films with different carbon doping concentrations. (f)–(g) Raman scattering spectra of ZnO thin films with varying carbon doping concentrations.
FIG. 2. (a)–(c) SEM images of ZnO thin films with different carbon doping concentrations, and (d)–(f) their respective grain distribution patterns. (g) AFM image of undoped ZnO thin film.
FIG. 3. (a) Transmission spectra of ZnO thin films with varying carbon doping concentrations, with the inset displaying a representative photograph. (b) Illustration of the blue shift phenomenon at the absorption edge. (c) Correlation between (ahv) 2 and hv, with the inset showing the bandgap of ZnO thin films with different carbon doping concentrations. (d)–(f) Electrical properties of ZnO thin films with varying carbon doping concentrations.
FIG. 4. (a) Schematic diagram of the structure of an e-Ga2O3-based fully oxide solar-blind DUV photodetector. (b) Criteria for Ohmic contact between ZnO:C transparent conductive film and e-Ga2O3 film. (c) I–V characteristics (logarithmic scale) under dark conditions and 254 nm illumination. (d) Noise spectral density of the device. (e) Relationshipbetween photocurrent and light intensity. (f) Transient photoresponse of the device under 254 nm light with varying illumination intensities.
论文信息：
Lijuan Ye, Jianhao Yu(本科生), Hong Zhang*, Di Pang, Yan Tang, Chunyang Kong, Liang Fang, Haibo Ruan and Wanjun Li*. Carbon-Doped ZnO Thin Films: A Transparent Conductive Oxide for Application in Solar-Blind Photodetectors. Applied Physics Letters. 2024, 125: 012104.
论文链接：
https://doi.org/10.1063/5.0218475.
重庆师范大学宽禁带半导体材料与器件团队
https://www.x-mol.com/groups/li_wanjun
